VTB8440 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTB Process Photodiodes

VTB Process Photodiodes
VTB8440, 8441
PACKAGE DIMENSIONS inch (mm)
CASE 21 8 mm CERAMIC
CHIP ACTIVE AREA: .008 in² (5.16 mm²)
PRODUCT DESCRIPTION
Planar silicon photodiode in a recessed ceramic
package. Chip is coated with a protective layer
of epoxy. These diodes have very high shunt
resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
I_SC
TC I_SC
V_OC
TC V_OC
I_D
R_SH
TC R_SH
C_J
S_R
λ_range
λ_p
V_BR
θ_1/2
NEP
D*
Short Circuit Current
I_SC Temperature Coefficient
Open Circuit Voltage
V_OC Temperature Coefficient
Dark Current
Shunt Resistance
R_SH Temperature Coefficient
Junction Capacitance
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
365 nm
VTB8440
Min. Typ. Max.
35
45
.12
.23
490
-2.0
2000
.07
-8.0
1.0
.10
320
1100
920
2
40
±50
5.9 x 10^-14 (Typ.)
3.9 x 10 ¹² (Typ.)
VTB8441
Min. Typ. Max.
35
45
.12
.23
490
-2.0
100
1.4
-8.0
1.0
.10
320
1100
920
2
40
±50
1.3 x 10^-14 (Typ.)
1.7 x 10 ¹³ (Typ.)
UNITS
µA
%/°C
mV
mV/°C
pA
GΩ
%/°C
nF
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
41