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VTB6061UV Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTB Process Photodiodes
VTB Process Photodiodes
VTB6061UV
PACKAGE DIMENSIONS inch (mm)
Large area planar silicon photodiode in a dual
lead TO-8 package with a UV transmitting “flat”
window. Cathode is common to the case. These
diodes have very high shunt resistance and
have good blue response.
CASE 15 TO-8 HERMETIC
CHIP ACTIVE AREA: .058 in2 (37.7 mm2)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
ISC
TC ISC
VOC
TC VOC
ID
RSH
TC RSH
CJ
SR
SR
λrange
λp
VBR
θ1/2
NEP
D*
Short Circuit Current
ISC Temperature Coefficient
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Shunt Resistance
RSH Temperature Coefficient
Junction Capacitance
Sensitivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
365 nm
220 nm
VTB6061UV
Min.
Typ.
Max.
260
350
.12
.23
490
-2.0
2.0
.10
-8.0
8.0
.10
.04
200
1100
920
2
40
±55
5.7 x 10-14 (Typ.)
1.1 x 10 13 (Typ.)
UNITS
µA
%/°C
mV
mV/°C
nA
GΩ
%/°C
nF
A/W
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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