VTB5051UVJ Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTB Process Photodiodes

VTB Process Photodiodes
VTB5051UVJ
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
CASE 14A TO-5 HERMETIC
CHIP ACTIVE AREA: .023 in² (14.8 mm²)
Planar silicon photodiode in a three lead TO-5
package with a UV transmitting “flat” window.
Chip is isolated from the case. The third lead
allows case to be grounded. These diodes have
very high shunt resistance and have good blue
response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
I_SC
TC I_SC
V_OC
TC V_OC
I_D
R_SH
TC R_SH
C_J
S_R
S_R
λ_range
λ_p
V_BR
θ_1/2
NEP
D*
Short Circuit Current
I_SC Temperature Coefficient
Open Circuit Voltage
V_OC Temperature Coefficient
Dark Current
Shunt Resistance
R_SH Temperature Coefficient
Junction Capacitance
Sensitivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = -10 mV
H = 0, V = -10 mV
H = 0, V = 0
365 nm
220 nm
VTB5051UVJ
Min.
Typ.
Max.
85
130
.12
.23
490
-2.0
250
.56
-8.0
3.0
0.1
.038
200
1100
920
2
40
±50
2.1 x 10^-14 (Typ.)
1.8 x 10 ¹³ (Typ.)
UNITS
µA
%/°C
mV
mV/°C
pA
GΩ
%/°C
nF
A/W
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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