VTB1112 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTB Process Photodiodes

VTB Process Photodiodes
VTB1112, 1113
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
CASE 19 TO-46 LENSED HERMETIC
CHIP ACTIVE AREA: .0025 in² (1.60 mm²)
Small area planar silicon photodiode in a
lensed, dual lead TO-46 package. Cathode is
common to the case. These diodes have very
high shunt resistance and have good blue
response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
I_SC
TC I_SC
V_OC
TC V_OC
I_D
R_SH
TC R_SH
C_J
S_R
λ_range
λ_p
V_BR
θ_1/2
NEP
D*
Short Circuit Current
I_SC Temperature Coefficient
Open Circuit Voltage
V_OC Temperature Coefficient
Dark Current
Shunt Resistance
R_SH Temperature Coefficient
Junction Capacitance
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
365 nm
VTB1112
Min. Typ. Max.
30
60
.12
.23
490
-2.0
100
.25
-8.0
.31
.19
320
1100
920
2
40
±15
3.0 x 10^-14 (Typ.)
4.2 x 10 ¹² (Typ.)
VTB1113
Min. Typ. Max.
30
60
.12
.23
490
-2.0
20
7.0
-8.0
.31
.19
320
1100
920
2
40
±15
5.9 x 10^-15 (Typ.)
2.1 x 10 ¹³ (Typ.)
UNITS
µA
%/°C
mV
mV/°C
pA
GΩ
%/°C
nF
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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