C30807 Datasheet, PDF (1/5 Pages) PerkinElmer Optoelectronics – N-Type Silicon PIN Photodetectors

N-Type Silicon PIN Photodetectors
C30807, C30808, C30809, C30810, C30822, C30831
EVERYTHING
IN A
NEW
LIGHT.
Description
Features
This family of N-type silicon p-i-n
photodiodes is designed for use in a wide
variety of broad band low light level
applications covering the spectral range
from below 400 to over 1100 nm.
The different types making up this series
provide a broad choice in photosensitive
areas and in time response
characteristics. Each of the types is
antireflection coated to enhance
responsivity at 900 nm.
• Broad Range of Photosensitive Surface Areas
0.2 mm2 to 100 mm2
• Low Operating Voltage VR = 45V
• Anti-Reflection Coated to Enhance Responsivity at 900 nm
• Hermetically-Sealed Packages
• Spectral Response Range 400 to 1100 nm
Maximum Ratings, Absolute-Maximum Values (All Types)
These characteristics make the devices
highly useful in HeNe and GaAs laser
detection systems and in optical
demodulation, data transmission, ranging,
and high-speed switching applications.
DC Reverse Operating Voltage V_R . . . . . . . . . . . . . . . .100 max. V
Photocurrent Density, jp at 22°C:
Average value, continuous operation . . . . . . . . . .5 mA/mm²
Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA/mm²
Forward Current, I_F:
Average value, continuous operation . . . . . . . . . .10 max. mA
Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 max. mA
Ambient Temperature:
Storage, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . .-60 to +100°C
Operating, T_A . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40 to +80°C
Soldering (for 5 seconds) . . . . . . . . . . . . . . . . . . . . . . . .200°C