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PT7C5022 Datasheet, PDF (5/13 Pages) Pericom Semiconductor Corporation – Crystal Oscillator Module ICs
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Data Sheet
PT7C5022 Series
Crystal Oscillator Module ICs
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DC Electrical Characteristics
3V operation: AxA series
VDD = 2.7 to 3.6V, TA = -20 to 80°C, unless otherwise noted.
Sym. Parameter
Condition
Min
IDD
Current consumption
INH = open, Measurement cct 3, load cct 1, CL = 15 pF, 30
MHz cr ystal oscillator
-
VIH High level input voltage
INH pin
2.0
VIL Low level input voltage
INH pin
-
RUP INH pull-up resistance
Measurement cct 4
25
Rf Feedback resistance
Measurement cct 5
200
CG
CD
Built-in capacitance
Design value,
determined by the
internal wafer pattern
PT7C5022A1A, PT7C5022A3A,
PT7C5022A5A, PT7C5022A7A
7.44
9.3
VOH
High level output
voltage
Q: Measurement cct 1, IOH = 4mA
2.1
VOL
Low level output
voltage
Q: Measurement cct 2, IOL = 4mA
-
IZ
Output leakage current
Q: Measurement cct 2, VDD = 3.6V,
= LOW
VINH
VOH = VDD
-
VOL = GND
-
Typ Max Unit
4
7 mA
-
-
V
-
0.5 V
100 250 kΩ
600 1000 kΩ
8
8.56
pF
10 10.7
2.4
-
V
0.3
0.4
V
-
10
µA
-
10
5V operation: AxA series/BxA series
VDD = 4.5 to 5.5 V, TA = -20 to 80°C, unless otherwise noted.
Sym.
Parameter
Condition
Min Typ Max Unit
INH = open, Measurement Load cct 1 PT7C5022AxA -
IDD Current consumption cct 3, CL = 15 pF, 30MHz
crystal
Load cct 2 PT7C5022BxA -
7
12
mA
7
12
VIH High level input voltage
INH
2.0
-
-
V
VIL Low level input voltage
INH
-
-
0.8 V
RUP INH pull-up resistance
Measurement cct 4
25
100
250 kΩ
Rf Feedback resistance
Measurement cct 5
200
600 1000 kΩ
CG
Design value,
PT7C5022A1A, PT7C5022A3A, 7.44
8
8.56
Built-in capacitance determined by the PT7C5022A5A, PT7C5022A7A,
pF
CD
internal wafer pattern
PT7C5022B1A
9.3
10
10.7
VOH
High level output
voltage
VOL
Low level output
voltage
Q: Measurement cct 1, IOH = 8 mA
Q: Measurement cct 1, IOL = 8 mA
3.9
4.2
-
V
-
0.3
0.4 V
VOH = VDD
-
IZ Output leakage current Q: Measurement cct 2, INH=LOW
VOL = GND
-
-
10
µA
-
10
PT0193(06/05)
5
Ver: 1
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