PI3A2268 Datasheet, PDF (4/9 Pages) Pericom Semiconductor Corporation – Small Plastic Package, Dual SPDT Analog Switch

PI3A2268
Small Plastic Package, Dual SPDT Analog Switch
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+4.2V Supply (V_DD = 4.2V, T_A = –40°C to 85°C, unless otherwise noted. Typical values are at 4.2V and +25°C.)
Parameter
Symbol
Test Conditions
TEMP
Min. Typ.
ANALOG SWITCH
Analog Signal Range
V_NO, V_NC,
V_COM
-
-40 °C to 85 °C 0
-
On-Resistance
R_ON
V_DD = 4.2V, I_COM = 100mA, V_NO or
+25°C
- 0.45
V_NC =1V, Test Circuit 1
-40 °C to 85 °C - 0.45
On-Resistance Match
Between Channels
ΔR_ON
V_DD = 4.2V, I_COM = 100mA, V_NO or
+25°C
-
V_NC =1V, Test Circuit 1
-40 °C to 85 °C -
0.05
0.05
On-Resistance
Flatness
R_ONF
V_DD = 4.2V, I_COM = 100mA, V_NO or
+25°C
-
0.1
V_NC = 1V, 2.5V, Test Circuit 1
-40 °C to 85 °C -
0.1
Source Off
Leakage Current
I_{OFF (NO)} or
I_{OFF (NC)}
V_DD= 4.2V, V_NO or V_NC
3.3V/0.3V, V_COM = 0.3V/3V
=
-40 °C to 85 °C
-
-
Channel On Leakage
Current
I_NC(ON),
I_NO(ON), I_COM
V_DD = 4.2V, V_NO or V_NC = 3V/
0.3V, V_COM = 3V/0.3V, or floating
-40 °C to 85 °C
-
-
(ON)
DIGITAL INPUTS
Input Logic High
V_IH
-
-40 °C to 85 °C 1.2
-
Input Logic Low
IN Input Leakage
Current
V_IL
-
I_IN
V_DD = 4.2V, V_IN=0 or 4.2V
-40 °C to 85 °C -
-
-40 °C to 85 °C -
-
DYNAMIC CHARACTERISTICS
Turn-On Time
t_ON
V_IH=3V, V_IL=0V,
See Test Circuit Figure 2.
+25°C
-
13
Turn-Off Time
t_OFF
V_IH=3V, V_IL=0V,
See Test Circuit Figure 2.
+25°C
-
12
Break-Before-Make
Delay
t_D
V_IH=3V, V_IL=0V,
See Test Circuit Figure 3.
+25°C
-
8
COM-NC/NO and
NC-NO Isolations
V_BIAS = 2.1V,
100kHz
O_ISO
V_IN=0dBm, V_IH=3V,
V_IL=0V. See Test Circuit
1MHz
Figure 4 & Figure 5.
10MHz
+25°C
+25°C
+25°C
-
-83
-
-61
-
-39
Max.
V_DD
0.75
0.85
0.18
0.23
0.22
0.26
1
1
-
0.5
1
-
-
-
-
-
-
Units
V
Ω
Ω
Ω
μA
V
μA
ns
ns
ns
dB
Channel-to-channel
Crosstalk
X_TALK
3dB Bandwidth
f_3dB
Charge Injection
Select Input to
Q
Common I/O
POWER REQUIREMENTS
Power Supply Range
V_DD
Power Supply
Current
I_CC
V_BIAS = 2.1V,
V_IN=0dBm, V_IH=3V,
V_IL=0V See Test Circuit
Figure 6.
100kHz
1MHz
10MHz
V_BIAS = 2.1V, V_IN=0dBm, V_IH=3V,
V_IL=0V. See Test Circuit Figure 7.
V_IN = GND, R_S = 0, C_L = 1nF,
V_IH=3V, V_IL=0V
See Test Circuit Figure 8.
+25°C
+25°C
+25°C
+25°C
+25°C
- -108 -
- -110 -
dB
-
-90
-
-
84
- MHz
-
50
-
pC
-
V_DD=4.2V, V_IN=0V or V_DD
-40 °C to 85 °C 1.65 -
-40 °C to 85 °C -
-
4.2 V
1
μA
Capacitance
Parameter
NC Off Capacitance
NO Off Capacitance
NC On Capacitance
NO On Capacitance
Symbol
C_{NC (OFF)}
C_{NO (OFF)}
C_{NC (ON)}
C_{NO (ON)}
Test Conditions
f = 1MHz, See Test Circuit Figure 9.
f = 1MHz, See Test Circuit Figure 9.
f = 1MHz, See Test Circuit Figure 10.
f = 1MHz, See Test Circuit Figure 10.
Min.
-
-
-
-
Typ.
20
20
55
55
Max.
-
-
-
-
Units
pF
13-01-0003
PT0366-3
01/25/13
4