PE4124 Datasheet, PDF (1/8 Pages) Peregrine Semiconductor Corp. – High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS

Product Description
The PE4124 is a high linearity, passive Quad MOSFET Mixer
for GSM 800 & Cellular Base Station Receivers and exhibits
high dynamic range performance over a broad LO drive range
up to 20 dBm. This mixer integrates passive matching networks
to provide single-ended interfaces for the RF and LO ports,
eliminating the need for external RF baluns or matching
networks. The PE4124 is optimized for frequency down-
conversion using low-side LO injection for GSM 800 & Cellular
Base Station applications, and is also suitable for use in
up-conversion applications.
The PE4124 is manufactured on Peregrine’s UltraCMOS™
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
Figure 1. Functional Diagram
LO
Product Specification
PE4124
High Linearity Quad MOSFET Mixer
for GSM 800 & Cellular BTS
Features
• Integrated, single-ended RF & LO
interfaces
• High linearity: IIP3 > +32 dBm,
820 - 920 MHz (+17 dBm LO)
• Low conversion loss: 6.9 dB
(+17 dBm LO)
• High isolation: typical LO-IF at 43 dB,
LO-RF at 31 dB
• Designed for low-side LO injection
Figure 2. Package Type
8-lead TSSOP
RF
IF
PE4124
Table 1. AC and DC Electrical Specifications @ +25 °C (Z_S = Z_L = 50 Ω)
Parameter
Minimum
Typical
Maximum
Frequency Range:
LO
750
--
850
RF
820
--
920
IF¹
--
70
--
Conversion Loss²
6.9
7.3
Isolation:
LO-RF
LO-IF
29
31
38
43
Input IP3
29
32.5
Units
MHz
MHz
MHz
dB
dB
dB
dBm
Input 1 dB Compression
23
dBm
Notes: 1. An IF frequency of 70 MHz is a nominal frequency. The IF frequency can be specified by the user as long as the RF and LO frequencies
are within the specified maximum and minimum.
2. Conversion Loss includes loss of IF transformer (M/A COM ETC1-1-13, nominal loss 0.7dB at 70MHz).
*Test conditions unless otherwise noted: LO = 70 MHz, LO input drive = 17 dBm, RF input drive = 3 dBm.
Document No. 70-0043-04 │ www.psemi.com
©2006 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 8