SIC10A065ND Datasheet, PDF (2/5 Pages) Pan Jit International Inc. – SILICON CARBIDE SCHOTTKY DIODE

SiC10A065ND
Maximum Ratings
PARAMETER
Non-Repetitive Peak Forward Surge Current
(T_P=10mS, Half Sine Wave)
Non-Repetitive Peak Forward Surge Current
(T_P=10uS, Pulse)
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction to Case
SYMBOL
I_FSM
TEST CONDITIONS
TC=25^oC
TC=125^oC
TC=25^oC
P_D
T_J
T_STG
R_θJC
TC=25^oC
TC=125^oC
VALUE
69
63
400
93
31
175
-55 to 175
1.6
UNITS
A
A
A
W
W
o_C
o_C
o_C/W
Electrical Characteristics
PARAMETER
DC Blacking Voltage
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
SYMBOL
V_DC
V_F
I_R
Q_C
C
TEST CONDITION
I_R =100uA, TJ=25^oC
I_F =10A, TJ=25^oC
I_F =10A, TJ=175^oC
V_R =650V, TJ=25^oC
V_R =650V, TJ=175^oC
I_F =10A, di/dt=300A/uS,
V_R =400V, TJ=25^oC
V_R =1V, TJ=25^oC, f=1MHz
V_R =200V, TJ=25^oC, f=1MHz
V_R =400V, TJ=25^oC, f=1MHz
MIN.
650
-
-
-
-
-
-
-
-
TYP.
770
1.5
1.9
5
20
MAX.
-
1.8
2.2
70
190
UNITS
V
V
V
uA
uA
18
-
nC
398
-
pF
55
-
pF
54
-
pF
June 13,2016-REV.00
Page 2