SIC08A065T-AU Datasheet, PDF (2/5 Pages) Pan Jit International Inc. – SILICON CARBIDE SCHOTTKY DIODE

SiC08A065T-AU
Maximum Ratings
PARAMETER
Non-Repetitive Peak Forward Surge Current
(T_P=10mS, Half Sine Wave)
Non-Repetitive Peak Forward Surge Current
(T_P=10uS, Pulse)
Power Dissipation
SYMBOL
I_FSM
P_D
TEST CONDITIONS
TC=25^oC
TC=125^oC
TC=25^oC
TC=25^oC
TC=125^oC
Operating Junction Temperature
T_J
Storage Temperature
T_STG
Thermal Resistance Junction to Case
R_θJC
VALUE
62
54
250
100
33
175
-55 to 175
1.5
UNITS
A
A
A
W
W
o_C
o_C
o_C/W
Electrical Characteristics
PARAMETER
DC Blacking Voltage
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
SYMBOL
V_DC
V_F
I_R
Q_C
C
TEST CONDITION
I_R =100uA, TJ=25^oC
I_F =8A, TJ=25^oC
I_F =8A, TJ=175^oC
V_R =650V, TJ=25^oC
V_R =650V, TJ=175^oC
I_F =8A, di/dt=300A/uS,
V_R =400V, TJ=25^oC
V_R =1V, TJ=25^oC, f=1MHz
V_R =200V, TJ=25^oC, f=1MHz
V_R =400V, TJ=25^oC, f=1MHz
MIN.
650
-
-
-
-
-
-
-
-
TYP.
770
1.5
1.9
3
20
MAX.
-
1.8
2.2
60
190
UNITS
V
V
V
uA
uA
15.5
-
nC
306
-
pF
47
-
pF
47
-
pF
March 2,2015-REV.02
Page 2