SBT20100VCT Datasheet, PDF (2/4 Pages) Pan Jit International Inc. – ULTRA LOW VF SCHOTTKY RECTIFIER

SBT20100VCT
ELECTRICAL CHARACTERISTICS(TA=25^oC unless otherwise noted)
PARAMETER
Breakdown voltage per diode
Instantaneous forward voltage per
diode
Reverse current per diode
SYMBOL
TEST CONDITIONS
VBR I R=0.5mA
I F=3A
I F=5A
I F=10A
VF
I F=3A
I F=5A
I F=10A
VR=70V
IR
VR=100V
TJ=25^oC
TJ=125^oC
TJ=25^oC
TJ=125^oC
MIN.
100
-
-
-
-
-
-
-
-
-
TYP.
-
0.47
0.53
0.66
0.4
0.49
0.61
5
-
7.2
MAX.
-
-
-
0.71
-
-
-
-
80
-
UNIT
V
V
V
A
A
mA
12
10
8
6
4
2
Per Diode
0
0
25 50
75 100 125 150
T_C, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
100
Per Diode
10
1
T_J = 150°C
T_J = 125°C
0.1
T_J = 75°C
0.01
0.001
T_J = 25°C
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
1000
100
10
Per Diode
1
1
10
100
V_R, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
100
T_J = 150°C
10
T_J = 125°C
1
T_J = 75°C
0.1
0
T_J = 25°C
Per Diode
0.2
0.4
0.6
0.8
1
V_F, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
August 12,2013-REV.00
PAGE . 2