SBT10120UFCT Datasheet, PDF (2/4 Pages) Pan Jit International Inc. – EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER

PSBT10120UFCT
Electrical
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Breakdown voltage per
diode
Instantaneous forward
voltage per diode
SYMBOL
V_BR
V_F
TEST CONDITION
I_R=0.5mA
TJ=25^oC
I_F=1A
I_F=3A
I_F=5A
I_F=1A
I_F=3A
TJ=25^oC
TJ=125^oC
Reverse current per
diode
V_R=96V
TJ=25^oC
I_R
TJ=25^oC
V_R=120V
TJ=125^oC
MIN.
120
-
-
-
-
-
-
-
-
TYP.
-
0.51
0.64
0.7
0.41
0.52
2
-
2.6
MAX. UNITS
-
V
-
-
V
0.75
-
V
-
-
A
20
A
-
mA
7.5
5
2.5
Per Diode
0
0 25 50
75 100 125 150
T_C, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
10
1
0.1
0.01
T_J = 150°C
T_J = 75°C
T_J = 125°C
0.001
0.0001
T_J = 25°C
Per Diode
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
1000
100
10
Per Diode
1
1
10
100
V_R, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
100
10
T_J = 150°C
T_J = 125°C
1
T_J = 75°C
0.1
0.01
0
T_J = 25°C
Per Diode
0.2
0.4
0.6
0.8
1
V_F, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
December 8,2014-REV.00
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