RB521S30FN2 Datasheet, PDF (2/5 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY DIODES

RB521S30FN2
ELECTRICAL CHARACTERISTICS ( T_J = 25^OC unless otherwise noted )
Parameter
Breakdown voltage
Forward Voltage
Reverse Current
Te s t C o nd it i o ns
I _R=0.5mA
I _F=10mA
I _F=20mA
I _F=100mA
I _F=200mA
I _F=10mA
I _F=20mA
I _F=100mA
V _R= 1 0 V
V _R= 3 0 V
T _J= 2 5 ^oC
T _J= 2 5 ^oC
T _J= 1 2 5 ^oC
T _J= 2 5 ^oC
T _J= 8 5 ^oC
T _J= 2 5 ^oC
T _J= 1 2 5 ^oC
Symbol
V_BR
V_F
I
R
M I N.
30
-
-
-
-
-
-
-
-
-
-
-
T Y P.
-
0.25
0.28
0.37
-
0.13
0.19
0.3
2
100
-
3
MAX.
-
-
-
-
0.51
-
-
-
-
-
30
-
Unit s
V
V
V
μA
μA
mA
0.25
0.2
0.15
0.1
0.05
0
0 25 50 75 100 125 150
T_C, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
10
1
T_J = 125°C
0.1
0.01
T_J = 75°C
0.001
T_J = 25°C
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
100
10
1
1
10
100
V_R, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
1000
100
T_J = 125°C
10
T_J = 75°C
1
T_J = 25°C
0.1
0
0.2
0.4
0.6
0.8
V_F, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
September 23,2015-REV.00
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