RB521S30 Datasheet, PDF (2/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY DIODE

RB521S30
ELECTRICAL CHARACTERISTICS
Tj = 25°C Unless otherwise noted
Parameter
Forward Voltage (Note 2)
Reverse Leakage Current
Total Capacitance
Symbol
V_F
I_R
C_T
Conditions
I _F = 200mA
V _R = 10V
0Vdc Bias, f =1 MHz
Note 2. Short duration pulse test to avoid self-heating effect
Min Typ Max Units
-
-
0.5
V
-
-
30
uA
- 26.6 35
pF
TYPICAL CHARACTERISTIC CURVES
1000
100 ^TJ ^{= 125°C}
10
1
T_J = 75°C
0.1
T_J = 25°C
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Forw ard Voltage, V_F (V)
Fig. 2. Typical Forward Characteristics
10000
1000
100
T_J = 125°C
T_J = 75°C
10
T_J = 25°C
1
0
10
20
30
40
Reverse Voltage, V_R (V)
Fig. 3. Typical Reverse Characteristics
100
f = 1MHz
10
1
0 5 10 15 20 25 30 35
Reverse Voltage, V_R , (V)
Fig. 4. Typical Capacitance
8/25/2005
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