QRT1006 Datasheet, PDF (2/7 Pages) Pan Jit International Inc. – Planar structure with EPI wafer

QRT1006/QRT1006F/QRT1006D
ELECTRICAL CHARACTERISTICS(TA=25^oC unless otherwise noted)
PARAMETER
Breakdown voltage
Instantaneous forward voltage
Reverse leakage current
Reverse recovery time
Peak recovery current
Reverse recovery charge
SYMBOL
TEST CONDITIONS
VBR
VF
IR
TRR
I RRM
QRR
I R=100A
I F=1A
I F=5A
I F=10A
I F=1A
I F=5A
I F=10A
VR=600V
I F=0.5A
I R=1A
I RR=0.25A
I F=1A
VR=30V
di/dt=100A/s
I F=10A
VR=400V
di/dt=200A/s
I F=10A
VR=400V
di/dt=200A/s
I F=10A
VR=400V
di/dt=200A/s
TJ=25^oC
TJ=125^oC
TJ=25^oC
TJ=125^oC
TJ=25^oC
TJ=25^oC
TJ=25^oC
TJ=25^oC
TJ=25^oC
MIN.
600
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
1.09
1.57
1.83
0.73
1.12
1.38
-
-
-
-
45
2
50
MAX.
-
-
-
2.35
-
-
1.6
3
100
30
25
-
-
-
UNIT
V
V
V
A
ns
ns
ns
A
nC
May 8,2014-REV.00
PAGE . 2