PJE8401 Datasheet, PDF (2/6 Pages) Pan Jit International Inc. – 20V P-Channel Enhancement Mode MOSFET

PPJE8401
Electrical Characteristics (T_A=25^oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BV_DSS
V_GS(th)
R_DS(on)
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
Ciss
Coss
Crss
td_(on)
tr
td_(off)
tf
I_S
TEST CONDITION
V_GS=0V, I_D=-250uA
V_DS=V_GS, I_D=-250uA
V_GS=-4.5V, I_D=-0.9A
V_GS=-2.5V, I_D=-0.6A
V_GS=-1.8V, I_D=-0.4A
V_DS=-20V, V_GS=0V
V_GS=+12V, V_DS=0V
V_DS=-10V, I_D=-0.9A,
V_GS=-4.5V ^{(Note 1,2)}
V_DS=-10V, V_GS=0V,
f=1.0MHZ
V_DD=-10V, I_D=-0.9A,
V_GS=-4.5V,
R_G=6Ω ^{(Note 1,2)}
---
Diode Forward Voltage
V_SD
I_S=-1A, V_GS=0V
MIN. TYP. MAX. UNITS
-20
-
-
V
-0.4 -0.69 -1.2
V
-
110
130
-
130
160
mΩ
-
160
210
-
-0.01
-1
uA
-
+10 +100
nA
-
5.4
-
-
0.7
-
nC
-
1.4
-
-
416
-
-
43
-
pF
-
32
-
-
4
-
27
-
ns
78
-
-
45
-
-
-
-0.4
A
-0.8
-1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
March 10,2014-REV.00
Page 2