PJE138K Datasheet, PDF (2/6 Pages) Pan Jit International Inc. – 50V N-Channel Enhancement Mode MOSFET . ESD Protected

PPJE138K
Electrical Characteristics (T_A=25^oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BV_DSS
V_GS(th)
R_DS(on)
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
Ciss
Coss
Crss
td_(on)
tr
td_(off)
tf
I_S
TEST CONDITION
V_GS=0V,I_D=250uA
V_DS=V_GS, I_D=250uA
V_GS=10V,I_D=500mA
V_GS=4.5V,I_D=200mA
V_GS=2.5V,I_D=100mA
V_DS=50V,V_GS=0V
V_GS=+20V,V_DS=0V
V_DS=25V, I_D=250mA,
V_GS=4.5V ^{(Note 1,2)}
V_DS=25V, V_GS=0V,
f=1.0MHZ
V_DD=25V, I_D=500mA,
V_GS=10V,
R_G=6Ω ^{(Note 1,2)}
---
Diode Forward Voltage
V_SD
I_S=500mA, V_GS=0V
MIN. TYP. MAX. UNITS
50
-
-
V
0.8
1.0
1.5
V
-
0.96
1.6
-
1.25
2.5
Ω
-
2.73
4.5
-
0.01
1
uA
-
+3.0 +10
uA
-
0.63
1
-
0.2
-
nC
-
0.23
-
-
40.8
50
-
2.8
10
pF
-
2.7
5
-
2.2
5
19.2
38
ns
6.2
12
-
23
50
-
-
500
mA
0.86
1.5
V
NOTES:
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
April 11,2013-REV.00
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