PJA55P03 Datasheet, PDF (2/6 Pages) Pan Jit International Inc. – 30V P-CHANNEL ENHANCEMENT MODE MOSFET

PJA55P03
ELECTRICAL CHARACTERISTICS (T_A=25^OC unless otherwise noted )
PARAMETER
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
B V _DSS
V _GS(th)
D rai n-Source On-State Resistance R_DS(on)
Zero Gate Voltage Drain Current
I_DSS
Gate -Source Leakage Current
I_GSS
Diode Forward Voltage
V_SD
Dynamic
V_GS=0V, I_D=-250μA
V _DS=V _GS, I_D=-250μA
V_GS= -10V, I _D= -4.3A
V_GS= -4.5V, I _D= -3.5A
V_DS= -30V, V_GS=0V
V_GS= +12V, V_DS=0V
I_S= -1A, V_GS=0V
Tota l Ga te C ha rg e
Gate-Source Charge
Gate-Drain Charge
Q_g
Q_gs
V_DS= -15V, I_D= -3.5A
V_GS= -10V
Q_gd
Turn-On D e la y Ti me
td_on
Turn-Off D e la y Ti me
Turn-On Ri se Ti me
t d _off
V = -15V , V = -10V,
DD
GEN
R=
G
6Ω
,
R=
L
15Ω,
t_r
I = -1.0A
D
Turn-Off F a ll Ti me
t_f
Input Capaci tance
C _iss
Output Capacitance
C _oss
Re ve rse Transfe r C a p a ci ta nce
C _rss
V_DS= -15V, V_GS=0V
f=1.0MH_Z
MIN.
T Y P.
MAX. UNITS
-30
-
-
V
-0.5
-1.0
-1.7
V
-
40
48
mΩ
-
46
55
-
-
-1
μA
-
-
+100
nA
-
-0.78
-1.5
V
-
26.8
-
-
2.53
-
nC
-
2.96
-
-
10.8
-
-
64.8
-
ns
-
18.8
-
-
9.6
-
-
1330
-
-
105
-
pF
-
88
-
November 25,2011-REV.00
PAGE . 2