PJA3433 Datasheet, PDF (2/6 Pages) Pan Jit International Inc. – 30V P-Channel Enhancement Mode MOSFET – ESD Protected

PPJA3433
Electrical
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic ^{(Note 5)}
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BV_DSS
V_GS(th)
R_DS(on)
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
Ciss
Coss
Crss
td_(on)
tr
td_(off)
tf
I_S
TEST CONDITION
V_GS=0V, I_D=-250uA
V_DS=V_GS, I_D=-250uA
V_GS=-4.5V, I_D=-1.1A
V_GS=-2.5V, I_D=-0.5A
V_GS=-1.8V, I_D=-0.1A
V_DS=-30V, V_GS=0V
V_GS=+8V, V_DS=0V
V_DS=-15V, I_D=-1.1A,
V_GS=-4.5V ^{(Note 1,2)}
V_DS=-15V, V_GS=0V,
f=1.0MHZ
V_DD=-15V, I_D=-1.1A,
V_GS=-4.5V,
R_G=6Ω ^{(Note 1,2)}
---
Diode Forward Voltage
V_SD
I_S=-1.0A, V_GS=0V
MIN. TYP. MAX. UNITS
-30
-
-
V
-0.5 -0.98 -1.3
V
-
293
370
-
387
540
mΩ
-
750
970
-
-0.01
-1
uA
-
+3.4 +10
uA
-
1.6
-
-
0.5
-
nC
-
0.3
-
-
125
-
-
22
-
pF
-
6
-
-
11
-
-
51
-
ns
-
65
-
-
46
-
-
-
-1.0
A
-
-0.9 -1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
January 22,2015-REV.01
Page 2