NSR0140 Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diode

NSR0140
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
CHARACTERISTIC
Reverse Breakdown Voltage (I R=10µA)
Total Capacitance (VR=1.0V, f=1.0MHz)
Reverse Leakage (VR=30V)
Forward Voltage (I F=1.0mA)
SYMBOL
V(BR)R
CT
IR
VF
MIN.
30
-
-
-
TYP.
-
2.0
300
0.28
MAX.
-
2.5
500
0.35
UNIT
V
pF
nA
V
REV.0.0-NOV.14.2008
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