MMDT4401 Datasheet, PDF (2/3 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMDT4401
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector - Emitter Breakdown Voltage
S ym b o l
Te s t C o nd i ti o n
V (BR)C E O IC=1.0mA , IB=0
Collector - Base Breakdown Voltage
V (BR)C B O IC=100uA , IE=0
Emitter - Base Breakdown Voltage
V (BR)E B O IE=100uA , IC=0
Base Cutoff Current
IB L
VCE=35V, VEB=0.4V
Collector Cutoff Current
DC Current Gain (Note 2)
Collector - Emitter Saturation Voltage
(Note 2)
Base - Emitter Saturation Voltage
(Note 2)
Collector - Base Capacitance
IC E X
VCE=35V, VEB=0.4V
IC=0.1mA, VCE=1.0V
IC=1.0mA, VCE=1.0V
h_{F E}
IC=10mA, VCE=1.0V
IC=150mA, VCE=1.0V
IC=500mA, VCE=2.0V
V CE(SAT)
V BE(SAT)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
C CBO V CB=5V, IE=0, f=1MHz
Emitter - Base Capacitance
C EBO V CB=0.5V, IC=0, f=1MHz
Current Gain - Bandwidth Product
D e la y Ti me
Ri se Ti me
S to ra g e Ti me
F a ll Ti me
FT
VCE=10V, IC=20mA, f=100MHz
td
VCC=30V,VBE=2.0V,
IC = 1 5 0 m A , IB 1 = 1 5 m A
tr
VCC=30V,VBE=2.0V,
IC = 1 5 0 m A , IB 1 = 1 5 m A
ts
V C C = 3 0 V, IC = 1 5 0 m A
IB 1 = IB 2 = 1 5 m A
tf
V C C = 3 0 V, IC = 1 5 0 m A
IB 1 = IB 2 = 1 5 m A
MIN.
40
60
6.0
-
-
20
40
80
100
40
-
0.75
-
-
-
250
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
100
100
-
-
-
300
-
0.40
0.75
0.95
1.20
6.5
30
-
15
20
225
30
Uni ts
V
V
V
nA
nA
-
V
V
pF
pF
MHz
ns
ns
ns
ns
STAD-JUN.05.2006
PAGE . 2