MMDT3904_06 Datasheet, PDF (2/4 Pages) Pan Jit International Inc. – DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR

MMDT3904
ELECTRICAL CHARACTERISTICS
PA RA ME TE R
S ym b o l
Te s t C o nd i ti o n
Collector - Emitter Breakdown Voltage
V _(BR)CEO
I_C=1 .0 mA , I_B=0
Collector - Base Breakdown Voltage
V _(BR)CBO
I_C=1 0 uA , I_E=0
Emitter - Base Breakdown Voltage
V _(BR)EBO
I_E=1 0 uA , I_C=0
Base Cutoff Current
I_{B l}
V_CE=30V, V_EB=3.0V
Collector Cutoff Current
DC Current Gain (Note 2)
Collector - Emitter Saturation Voltage
(Note 2)
Base - Emitter Saturation Voltage
(Note 2)
Collector - Base Capacitance
I_{C E X}
h_{F E}
V _CE(SAT)
V _BE(SAT)
C _CBO
V_CE=30V, V_EB=3.0V
I_C=0 .1 mA , V _CE=1 .0 V
I_C=1 .0 mA , V _CE=1 .0 V
I_C=1 0 mA , V _CE=1 .0 V
I_C=5 0 mA , V _CE=1 .0 V
I_C=1 0 0 mA , V _CE=1 .0 V
I_C=1 0 mA , I_B=1 .0 mA
I_C=5 0 mA , I_B=5 .0 mA
I_C=1 0 mA , I_B=1 .0 mA
I_C=5 0 mA , I_B=5 .0 mA
V _CB=5 V, I_E=0 , f=1 MHz
Emitter - Base Capacitance
D e la y Ti me
Ri s e Ti me
S to ra g e Ti me
F a ll Ti me
C _EBO
td
tr
ts
tf
V _CB=0 .5 V, I_C=0 , f=1 MHz
V _CC=3 V,V _BE=-0 .5 V,
I_C=1 0 mA ,I_B=1 .0 mA
V _CC=3 V,V _BE=-0 .5 V,
I_C=1 0 mA ,I_B=1 .0 mA
V _CC=3 V,I_C=1 0 mA
I_B1 =I_B2 =1 .0 mA
V _CC=3 V,I_C=1 0 mA
I_B1 =I_B2 =1 .0 mA
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
M IN .
40
60
6.0
-
-
40
70
100
60
30
-
0.65
-
-
-
-
-
-
-
TYP.
-
MAX. Units
-
V
-
-
V
-
-
V
-
50
nA
-
50
nA
-
-
-
-
-
300
-
-
-
-
-
-
0.2
0.3
V
-
-
0.85
0.95
V
-
4.0
pF
-
8.0
pF
-
35
ns
-
35
ns
-
200
ns
-
50
ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
+ 1 0 .9 V
0
-0 .5 V
300ns
D uty C ycle ~ 2.0%
< 1ns
10K W
275 W
CS* < 4pF
D elay an d R ise Tim e E q u iv a len t Test C ircu it
+3V
+ 1 0 .9 V
0
-9 .1 V
10 to 500us
D uty C ycle ~ 2.0%
< 1ns
10K W
1N916
275 W
CS* < 4pF
STAD-MAY.04.2006
S torag e and F all Tim e E q uivalent Test C ircu it
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