MMDT3904 Datasheet, PDF (2/4 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMDT3904
ELECTRICAL CHARACTERISTICS (Each Transistor) T_J = 25°C Unless otherwise noted
Parameter
Symbol
Conditions
Min Typ Max Units
Collector-Emitter Breakdown Voltage V_{(BR)CEO IC = 1.0mA}
Collector-Base Breakdown Voltage V_(BR)CBO I _C= 10uA
Emitter-Base Breakdown Voltage V_(BR)EBO I _E = 10uA
Collector Cutoff Current
Base Cutoff Current
I_CEX
I_BL
VCE= 30V, V _EB= 3.0V
VCE= 30V, V _EB= 3.0V
I C= 0.1mA, V CE= 1.0V
40
-
-
V
60
-
-
V
6.0
-
-
V
-
-
50 nA
-
-
50 nA
40
-
-
I C= 1.0mA, V CE= 1.0V
70
-
-
DC Current Gain (Note 2)
h _FE I _C= 10mA, V _CE= 1.0V
100
-
300
-
I C= 50mA, V CE= 1.0V
60
-
-
I C = 100mA, V CE= 1.0V
30
-
-
Collector-Emitter Saturation
Voltage (Note 2)
I _C= 10mA, I _B= 1.0mA
VCE(SAT)
I _C= 50mA, I _B= 5.0mA
-
-
0.2 V
-
-
0.3 V
Base-Emitter Saturation Voltage
(Note 2)
V_BE(SAT) ^{I C= 10mA, I B= 1.0mA}
I _C= 50mA, I _B= 5.0mA
0.65 - 0.85
V
-
- 0.95
Gain-Bandwidth Product
f_T
V _CE= 20V, I _C= 10mA
f = 100MHz
300
-
- MHz
Collector-Base Capacitance
Emitter-Base Capacitance
Delay Time
Rise Time
CCBO _{VCB= 5.0V, f =1.0MHz}
-
CEBO _{VEB= 0.5V, f =1.0MHz}
-
t d _{VCC= 3.0V, I C= 10mA}
-
t r ^{VBE(off) = -0.5V, IB1= -1.0mA} -
-
4.0 pF
-
8.0 pF
-
35 ns
-
35 ns
Storage Time
Fall Time
ts
VCC= 3.0V, I C= 10mA
t f ^{I B1= I B2= 1.0mA}
-
- 200 ns
-
-
50 ns
Note 2. Short duration test pulse used to minimize self-heating
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
+10.9V
300ns
Duty Cycle ~ 2.0%
0
-0.5V
< 1ns
10KΩ
275Ω
+10.9V
0
C_S* < 4pF
-9.1V
10 to 500us
Duty Cycle ~ 2.0%
< 1ns
10KΩ
1N916
+3V
275Ω
C_S* < 4pF
Delay and Rise Time Equivalent Test Circuit
Storage and Fall Time Equivalent Test Circuit
9/20/2005
Page 2
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