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MMDT2907A Datasheet, PDF (2/5 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2907A
ELECTRICAL CHARACTERISTICS (T =25OC, unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-10mA,IB=0
-60
-
-
V
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-10μA,IE=0
-60
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10μA,IC=0
-5.0
-
-
V
Base Cutoff Current
IBL
VCE=-30V,VEB=-0.5V
-
-
-50
nA
ICEX
VCE=-30V,VEB=-0.5V
-
-
-50
nA
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Capacitance
VCE=-50V,IE=0
-
ICBO
V =-50V,I =0
T =125OC
-
CE
E
J
-
-10
nA
-
-10
μA
hFE
VCE(SAT)
IC=-0.1mA,VCE=-10V
IC=-1.0mA,VCE=-10V
IC=-10mA,VCE=-10V
IC=-150mA,VCE=-10V
IC=-500mA,VCE=-10V
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
75
-
-
100
-
-
100
-
-
-
100
-
300
50
-
-
-
-
-
-
-0.4
-1.6
V
V
BE(SAT)
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
-
-
-
-
-1.3
-2.6
V
CCBO
VCB=-10V,IE=0,f=1MHz
-
-
8.0
pF
Emitter-Base Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
CEBO
FT
ton
td
tr
toff
ts
t
f
VCB=-2V,IC=0,f=1MHz
IC=-50mA,VCE=-20V,
f=100MHz
VCC=-30V,VBE=-0.5V,
IC=-150mA,IB=-15mA
VCC=-30V,VBE=-0.5V,
IC=-150mA,IB=-15mA
V =-30V,V =-0.5V,
CC
BE
I =-150mA,I =-15mA
C
B1
VCC=-6V,IC=-150mA,
IB1=IB2=-15mA
VCC=-6V,IC=-150mA,
IB1=IB2=-15mA
VCC=-6V,IC=-150mA,
IB1=IB2=-15mA
-
-
30
pF
200
-
-
MHz
-
-
45
ns
-
-
10
ns
-
-
40
ns
-
-
100
ns
-
-
80
ns
-
-
30
ns
May 12.2010-REV.00
PAGE . 2