MMDT2222A Datasheet, PDF (2/4 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMDT2222A
ELECTRICAL CHARACTERISTICS (Each Transistor) T_J = 25°C Unless otherwise noted
Parameter
Symbol
Conditions
Min Typ Max Units
Collector-Emitter Breakdown Voltage V_{(BR)CEO IC = 10mA}
Collector-Base Breakdown Voltage V_(BR)CBO I _C= 10uA
Emitter-Base Breakdown Voltage V_(BR)EBO I _E = 10uA
Collector Cutoff Current
Base Cutoff Current
I_CEX
I_BL
VCE= 60V, V _EB= 3.0V
V CE= 60V, V _EB= 3.0V
I C= 0.1mA, V CE= 10V
40
-
-
V
75
-
-
V
6.0
-
-
V
-
-
10 nA
-
-
20 nA
35
-
-
I C= 1.0mA, V CE= 10V
50
-
-
I C= 10mA, V CE= 10V
75
-
-
DC Current Gain (Note 2)
h _{FE IC=10mA, VCE=10V, TJ=-55C} 50
-
-
-
I C = 150mA, V CE= 10V
100
-
300
I C = 500mA, V CE= 10V
40
-
-
I C = 150mA, V CE= 1.0V
35
-
-
Collector-Emitter Saturation
Voltage (Note 2)
I _C= 150mA, I _B = 15mA
-
-
0.3 V
VCE(SAT)
I _C= 500mA, I _B = 50mA
-
-
1.0 V
Base-Emitter Saturation Voltage
(Note 2)
V_BE(SAT) ^{I C= 150mA, I B = 15mA}
I _C= 500mA, I _B = 50mA
0.6
-
-
-
1.2
V
2.0
Gain-Bandwidth Product
f_T
V _CE= 20V, I _C= 20mA
f = 100MHz
300
-
- MHz
Collector-Base Capacitance
Emitter-Base Capacitance
Delay Time
Rise Time
CCBO _{VCB= 10V, f =1.0MHz}
-
CEBO _{VEB= 0.5V, f =1.0MHz}
-
t d _{VCC= 30V, I C=150mA}
-
t r ^{VBE(off) = -0.5V, IB1= 15mA}
-
-
8.0 pF
-
25 pF
-
10 ns
-
25 ns
Storage Time
Fall Time
t s _{VCC= 30V, I C=150mA}
t f ^{I B1= I B2= 15mA}
-
- 225 ns
-
-
60 ns
Note 2. Short duration test pulse used to minimize self-heating
1/2/2006
Page 2
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