MMBTH10 Datasheet, PDF (2/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT VHF/UHF TRANSISTOR

MMBTH10
ELECTRICAL CHARACTERISTICS ^{(TJ = 25°C, unless otherwise noted)}
OFF CHARACTERISTICS
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
V_(BR)CE0
V_(BR)CB0
V_(BR)EB0
I _CB0
I _EB0
Conditions
I_C = 1.0 mA, I_B = 0
I_C = 100 uA, I_E = 0
I_E = 10 uA, I_C = 0
V_CB = 25 V, _EI = 0
V_EB = 2.0 V, _CI = 0
Min Typical _Max
25
-
-
30
-
-
3.0
-
-
-
-
100
-
-
100
Units
V
V
V
nA
nA
ON CHARACTERISTICS
Parameter
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Symbol
Conditions
Min Typical _Max
h _FE
I_C = 4.0 mA, V_CE = 10 V ₆₀
180
-
V_CE(sat) I_C = 4.0 mA, I_B = 0.4 mA -
-
0.5
V_BE
I _C= 4.0 mA, V_CE = 10 V
-
-
0.95
Units
-
V
V
SMALL-SIGNAL CHARACTERISTICS
Parameter
Symbol
Current Gain - Bandwidth Product
f_T
Collector-Base Capacitance
C_cb
Common-Base Feedback Capacitance
C rb
Collector-Base Time Constant
rb'C _c
Conditions
Min Typical _Max
I _C= 4.0 mA, V_CE = 10 V
f = 1.0 MHz
650
-
-
V_CB = 10 V, _EI = 0
f = 1.0 MHz
-
-
0.7
V_CB = 10 V, _EI = 0
-
f = 1.0 MHz
-
0.65
I _C= 4.0 mA, V_CB = 10 V
f = 31.8 MHz
-
-
9.0
Units
MHz
pF
pF
ps
4/18/2006
Page 2
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