MMBTA42W Datasheet, PDF (2/6 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

MMBTA42W
THE RMA L C HA RA C TE RIS TIC S
PARAMETER
C OND ITIONS
Thermal resistance from junction to ambient note 1
Note : 1 .Mo unte d on a n F R4 P C B , si ng le -si d ed co pp e r, mi ni pa d .
C HA RA C TE RIS TIC S
TAMB=25^oC unless otherwi se speci fied
PARAMETER
C ollector-emi tter breakdown voltage
C ollector-base breakdown voltage
E mitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
D C current gain
C ollector-emi tter saturation voltage
B ase-emitter saturati on voltage
C ollector capaci tance
Tra ns i ti o n fre q ue nc y
C OND ITIONS
I C=1mA;I B=0
I C=100A;I E=0
I E=100A;I C=0
I E=0;VCB=200V
I C=0;VEB=6V
VCE=10V;
I C=1mA
I C=10mA
I C=30mA
I C=20mA;I B=2mA
I C=20mA;I B=2mA
I E=0;VCB=20V;
f=1MHz
I C=10mA;VCE=20V;
f=100MHz
S YMB OL
RJA
VALUE
550
S YMB OL
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I EBO
hFE
V CE(SAT)
V BE(SAT)
C CB
fT
MIN.
300
300
6
-
-
MAX.
-
-
-
100
100
25
-
40
-
40
-
-
0.5
-
0.9
-
3
50
-
UNIT
o_{C / W}
UNIT
V
V
V
nA
nA
-
-
-
V
V
pF
MHz
February 19,2013-REV.00
PAGE . 2