MMBT3906W Datasheet, PDF (2/4 Pages) Weitron Technology – General Purpose Transistor PNP Silicon

ELECTRICAL CHARACTERISTICS
PA R A M E TE R
C ollector - E m itter B reakdow n V oltage
S ym bol
Test C ondition
V (B R )C E O IC =-1.0m A , IB =0
M IN .
-4 0
TYP.
-
C ollector - B ase B reakdow n V oltage
V (B R )C B O IC =-10uA , IE =0
-4 0
-
E m itter - B ase B reakdow n V oltage
V (B R )E B O IE =-10uA , IC =0
-5 .0
-
B ase C utoff C urrent
IB L
V C E =-30V , V E B =-3.0V
-
-
C ollector C utoff C urrent
D C C urrent G ain (N ote 2)
C ollector - E m itter S aturation V oltage
(N ote 2)
B ase - E m itter S aturation V oltage
(N ote 2)
C ollector - B ase C apacitance
IC E X
V C E =-30V , V E B =-3.0V
IC =-0.1m A , V C E =-1.0V
IC =-1.0m A , V C E =-1.0V
h
IC =-10m A , V C E =-1.0V
FE
IC =-50m A , V C E =-1.0V
IC =-100m A , V C E =-1.0V
V C E (S A T)
V B E (S A T)
IC =-10m A , IB =-1.0m A
IC =-50m A , IB =-5.0m A
IC =-10m A , IB =-1.0m A
IC =-50m A , IB =-5.0m A
C CBO
V C B =-5V , IE =0, f=1M H z
-
-
60
-
80
-
100
-
60
-
30
-
-
-
-0 .6 5
-
-
-
-
-
E m itter - B ase C apacitance
C EBO
V C B =-0.5V , IC =0, f=1M H z
-
-
D elay Tim e
R ise Tim e
S torage Tim e
F all Tim e
td
V C C =-3V ,V B E =-0.5V ,
IC =-10m A ,IB =-1.0m A
tr
V C C =-3V ,V B E =-0.5V ,
IC =-10m A ,IB =-1.0m A
V C C =-3V ,IC =-10m A
ts
IB 1=IB 2=-1.0m A
tf
V C C =-3V ,IC =-10m A
IB 1=IB 2=-1.0m A
-
-
-
-
-
-
-
-
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
3V
M AX.
-
-
-
-5 0
-5 0
-
-
300
-
-
-0 .2 5
-0 .4
-0 .8 5
-0 .9 5
4 .5
10
35
35
225
75
U nits
V
V
V
nA
nA
-
V
V
pF
pF
ns
ns
ns
ns
0.5V
0
< 1ns
10KΩ
275Ω
C_S* < 4pF
300ns
-10.9V
1N916
Duty C ycle ~ 2.0%
Delay and Rise Tim e Equivalent Test Circuit
3V
STAD-JUL.06.2004
< 1ns
+9.1V
10K Ω
0
275 Ω
CC_SS** << 44ppFF
10 to 500us
-10.9V
1N916
Duty Cycle ~ 2.0%
Storage and Fall Time Equivalent Test Circuit
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