MMBT2907A Datasheet, PDF (2/5 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTOR

MMBT2907A
ELECTRICAL CHARACTERISTICS (T =25OC, unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Capacitance
Emitter-Base Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
V_{(B R )}CEO
I_C =-10mA,I_B =0
-60
-
-
V
V_{(B R )}CBO
I_C =-10µA,I_E =0
-60
-
-
V
V_{(B R )}EBO
I_E =-10µA,I_C =0
-5.0
-
-
V
I_{B L}
V_{C E}=-30V,V_EB=-0.5V
-
-
-50
nA
I_{C E X}
V_{C E}=-30V,V_EB=-0.5V
-
-
-50
nA
V_{C E}=-50V,I_E=0
-
-
-10
nA
I_{C B O}
V_{C E}=-50V,I_E=0
T_J =125^O C
-
-
-10
µA
I_C =-0.1mA,V_{C E} =-10V
75
-
-
I_C =-1.0mA,V_{C E} =-10V
100
-
-
h_{F E}
I_C =-10mA,V_{C E} =-10V
100
-
-
-
I_C =-150mA,V_{C E} =-10V
100
-
300
I_C =-500mA,V_{C E} =-10V
50
-
-
V_{C E(SAT)}
I_C =-150mA,I_B =-15mA
I_C =-500mA,I_B =-50mA
-
-
-
-
-0.4
-1.6
V
V_{B E (S AT)}
I_C =-150mA,I_B =-15mA
I_C =-500mA,I_B =-50mA
-
-
-
-
-1.3
-2.6
V
C
CBO
V =-10V,I =0,f=1MHz
CB
E
-
-
8.0
pF
C_{E B O}
V_{C B} =-2V,I_C =0,f=1MHz
-
-
30
pF
F_T
I_C =-50mA,V_{C E} =-20V,
f=100MHz
200
-
-
MHz
t_{o n}
V_{C C} =-30V,V_{B E} =-0.5V,
I_C =-150mA,I_B =-15mA
-
t_d
V_{C C} =-30V,V_{B E} =-0.5V,
I_C =-150mA,I_B =-15mA
-
t_r
V_{C C} =-30V,V_{B E} =-0.5V,
I_C =-150mA,I_{B 1} =-15mA
-
t_{o ff}
V_{C C} =-6V,I_C =-150mA,
I =I =-15mA
-
B1 B2
t
s
V_{C C} =-6V,I_C =-150mA,
I_{B 1} =I_{B 2} =-15mA
-
t_f
V_{C C} =-6V,I_C =-150mA,
I_{B 1} =I_{B 2} =-15mA
-
-
45
ns
-
10
ns
-
40
ns
-
100
ns
-
80
ns
-
30
ns
REV.0-JUN.1.2005
PAGE . 2