MMBT2222A_05 Datasheet, PDF (2/4 Pages) Pan Jit International Inc. – NPN GENERAL PURPOSE SWITCHING TRANSISTOR

ELECTRICAL CHARACTERISTICS
PARAMETER
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector - Emitter Saturation Voltage
(Note 2)
Base - Emitter Saturation Voltage
(Note 2)
Collector - Base Capacitance
Emitter - Base Capacitance
D e la y Ti me
Ri s e Ti me
S to ra g e Ti me
F a ll Ti me
S ym b o l
Te s t C o nd i ti o n
V (BR)C E O IC =1.0 mA , IB=0
V (BR)C B O IC =1 0 uA , IE=0
V (BR)E B O IE=10 uA , IC =0
IB L
VCE=60V, VEB=3.0V
IC E X
VCE=60V, VEB=3.0V
IC B O
V CE=60V, IE=0,
V CE=60V, IE=0,TJ=125^O C
IE B O
V EB=3.0V, IC =0,
h_{F E}
V CE(SAT)
V BE(SAT)
IC=0.1mA , V CE=10V
IC=1.0mA , V CE=10V
IC=10mA , V CE=10V
IC=10mA , V CE=10V,TJ=125^O C
IC=150mA , V CE=10V (Note 2)
IC=150mA , V CE=1V (Note 2)
IC=500mA , V CE=10V (Note 2)
IC=150mA , IB=15mA
IC=500mA , IB=50mA
IC=150mA , IB=15mA
IC=500mA , IB=50mA
CCBO
V CB=10V, IE=0, f=1MHz
CEBO
td
tr
ts
tf
V CB=0.5V, IC=0, f=1MHz
VCC=3V,VBE=-5V,
IC=150mA ,IB=15mA
VCC=3V,VBE=-5V,
IC=150mA ,IB=15mA
V CC=30V,IC=150mA
IB 1 = IB 2 = 1 5 m A
V CC=30V,IC=150mA
IB 1 = IB 2 = 1 5 m A
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
MIN.
40
75
6.0
-
-
-
-
35
50
75
35
100
50
40
-
0.6
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
20
10
10
10
100
-
-
-
-
300
-
-
0.3
1.0
1.2
2.0
8.0
25
10
25
225
60
Uni ts
V
V
V
nA
nA
nA
uA
nA
-
V
V
pF
pF
ns
ns
ns
ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30V
+30V
+16V
0
-2V
1.0 to 100us
Duty Cycle ~ 2.0%
< 2ns
1KΩ
Fig. 1. Turn-On Time
200Ω
+16V
C_S* < 10pF
0
-14V
Scope rise time < 4ns
1.0 to 100us
Duty Cycle ~ 2.0%
< 20ns
1KΩ
1N914
-4V
200Ω
C_S* < 10pF
* Total shunt capacitance of test jig, connectors, and oscilloscope
Fig. 2. Turn-Off Time
REV.0-JUN.21.2005
PAGE . 2