MMBFJ309 Datasheet, PDF (2/3 Pages) Pan Jit International Inc. – J-FET HIGH FREQUENCY AMPLIFIER TRANSISTOR

MMBFJ309 / MMBFJ310
ELECTRICAL CHARACTERISTICS ^{(TJ = 25°C, unless otherwise noted)}
OFF CHARACTERISTICS
Parameter
Symbol
Conditions
Min Typical _Max
Gate-Source Breakdown Voltage
V_(BR)GSS I _G = -1.0 µA, V_DS = 0 -25
-
-
Gate Reverse Current
I _GSS
V_GS = -15Vdc
-
V_GS = -15Vdc T_J =125°C -
-
-1.0
-
-1.0
Gate-Source Cutoff Voltage
MMBFJ309
MMBFJ310
V_{GS (off)}
V_DS = 10Vdc
I _DS = 1.0nAdc
-1.0
-
-4.0
-2.0
-
-6.5
Units
V
nA
µA
V
V
ON CHARACTERISTICS
Parameter
Zero Gate Current Drain Current
MMBFJ309
MMBFJ310
Gate-Source Forward Voltage
Symbol
I _DSS
V_GS(f)
Conditions
V_DS = 10Vdc
V_GS = 0Vdc
I_G= 1.0 mA, V_DS = 0
Min Typical _Max
12
-
30
24
-
60
-
-
1.0
Units
mA
mA
V
SMALL-SIGNAL CHARACTERISTICS
Parameter
Symbol
Forward Transfer Admittance
Y_fs
Output Admittance
y_os
Input Capacitance
C _iss
Reverse Transfer Capacitance
C _rss
Equivalent Short-Circuit Input Noise
Voltage
e_n
Conditions
I _D= 10 mA, V_DS = 10 V
f = 1.0 kHz
I _D= 10 mA, V_DS = 10 V
f = 1.0 kHz
V_GS = -10V, V_DS = 0V
f = 1.0 MHz
V_GS = -10V, V_DS = 0V
f = 1.0 MHz
I _D= 10 mA, V_DS = 10 V
f = 100 Hz
Min Typical
8.0
-
-
-
-
-
-
-
-
10
Max
18
250
5.0
2.5
-
Units
mmhos
µmhos
pF
pF
nV / Hz
9/19/2005
Page 2
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