MMBD717 Datasheet, PDF (2/3 Pages) Won-Top Electronics – SURFACE MOUNT SCHOTTKY BARRIER DIODE

ELECTRICAL CHARACTERISTICS (each diode) (T_J = 25°C unless otherwise noted)
PARAMETER
Reverse Breakdown Voltage
Symbol
V(BR)
Test Condition
IR=10 uA
MIN.
20
TYP.
--
Reverse Leakage Current
IR
VR=10 V
--
--
Forward Voltage
VF
IF=1.0mA
--
--
Maximum Junction Capacitance
CJ
VR=1V, f=1.0MHZ
--
--
MAX.
--
1.0
0.37
2.5
Units
V
uA
V
pF
ELECTRICAL CHARACTERISTICS CURVE
100
TA=125^oC
10
TA=75^oC
1.0
TA=25^oC
0.1
0
TA=-25^oC
0.1 0.2 0.3 0.4 0.5 0.6
VF , Forward Voltage (V)
Fig. 1. Typical Forward Voltage
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
15
20
VR, Reverse Voltage (V)
Fig. 3. Typical Total Capacitance
10
TA=125^oC
1
TA=75^oC
0.1
TA=25^oC
0.01
0
5
10
15
20
VR, Reverse Voltage (V)
Fig. 2. Typical Reverse Leakage
STAD-SEP.06.2004
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