MMBD701 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – Schottky Barrier Diode

MMBD701
ELECTRICAL CHARACTERISTICS (T_J=25^OC unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Reverse Leakage Current
Forword Voltage
Forword Voltage
Total Capacitance
Symbol
Test Condition
V_{(B R)}
I_R
V_F
V_F
C_J
I_R=10µA
V_R=35V
I_F=1.0mA
I_F=10mA
V_R=20V, f=1.0MHz
Min.
70
-
-
-
-
Typ.
-
-
-
-
-
Max.
Units
-
V
0.2
µA
0.5
V
1.0
V
1.5
pF
ELECTRICAL CHARACTERISTICS CURVES
100
T_J = 125 ^o C
10
T_J = 75 ^o C
1
0.1
T_J = 25 ^o C
0.01
0
20
40
60
80
Reverse Voltage, V_R (V)
FIG. 1-Typical Reverse Leakage
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
V_R , Reverse Voltage (V)
FIG. 3 TYPICAL TOTAL CAPACITANCE
100
T_J = 125 ^oC
10
T_J = 75 ^o C
T_J = -25 ^o C
1
T_J = 25 ^o C
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage, V_F (V)
FIG. 2-Typical Forward Voltage
REV.0.1-FEB.23.2009
PAGE . 2