MMBD330WS_09 Datasheet, PDF (2/3 Pages) Pan Jit International Inc. – SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

MMBD330WS
ELECTRICAL CHARACTERISTICS (T_J=25^OC unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Reverse Leakage Current
Forword Voltage
Forword Voltage
Total Capacitance
Symbol
Test Condition
V_{(B R)}
I_R
V_F
V_F
C_J
I_R=10µA
V_R=25V
I_F=1.0mA
I_F=10mA
V_R=15V, f=1.0MHz
Min.
30
-
-
-
-
Typ.
-
-
-
-
-
Max.
Units
-
V
0.2
µA
0.45
V
0.6
V
1.5
pF
ELECTRICAL CHARACTERISTICS CURVES
100
10
T_J = 125 °C
T_J = 75 °C
1
T_J = 25 °C
T_J = - 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VF, Forward Voltage (V)
FIG. 1-TYPICAL FORWARD CHARACTERISTIC
2.4
f = 1MHz
2.0
1.6
1.2
0.8
0.4
0.0
0
5
10
15
20
25
30
V_R, Reverse Voltage (Volts)
FIG. 3 TYPICAL TOTAL CAPACITANCE
100
10
1
0.1
0.01
T_J = 125 °C
T_J = 75 °C
T_J = 25 °C
0.001
0
10
20
30
40
VR, Reverse Voltage (V)
FIG. 2-TYPICAL REVERSE CHARACTERISTICS
REV.0.1-FEB.27.2009
PAGE . 2