MMBD330W Datasheet, PDF (2/4 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY DIODE

ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Test Condition
MIN.
TYP.
Reverse Breakdown Voltage
V(BR)
IR=10 uA
30
Reverse Leakage Current
IR
VR=25V
Forward Voltage
VF
IF=1.0mA
Forward Voltage
VF
IF=10mA
Total Capacitance
CT
VR=15V, f=1.0MHz
RATING AND CHARACTERISTIC CURVES
MAX.
0.2
0.45
0.6
1.5
UNIT
V
uA
V
V
pF
100
10
1
0.1
0.01
TA=125^OC
TA=75^OC
TA=25^OC
0.001
0
10
20
30
40
VR, Reverse Voltage (V)
Fig.1 TYPICAL REVERSE CHARACTERISTICS
100
10
1
125^OC
75^OC
25^O C
TA=-25^OC
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VF, Forward Voltage (V)
Fig.2-TYPICAL FORWARD CHARACTERISTICS
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
f = 1MHz
5
10
15
20
25
30
V_{R, Reverse Voltage (Volts)}
Fig.3 TYPICAL TOTAL CAPACITANCE
STAD-SEP.29.2003
PAGE . 2