MMBD3004BRM Datasheet, PDF (2/3 Pages) Diodes Incorporated – HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY

MMBD3004BRM
ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25°C Unless otherwise noted
Parameter
Symbol
Conditions
Min
Breakdown Voltage (Note 1)
V_BR
I _BR = _150uA
350
Forward Voltage (Note 1)
I _F = 20mA
-
V_F
I _F = 100mA
-
I _F = 200mA
-
Reverse Leakage Current (Note 1)
I_R
V_R = 240V
-
V_R = 240V T_J =150°C -
Total Capacitance
C_T
0Vdc Bias, f =1 MHz
-
Reverse Recovery Time
t _rr
I_F = I_R =30mA, I_RR= 3mA
R _L= 100 ohms
-
Note 1. Short duration pulse test to avoid self-heating effect
Typ Max
-
-
0.82 0.87
0.95 1.0
1.0 1.25
0.02 0.1
0.5 100
1.7 5.0
-
50
Units
V
V
uA
pF
ns
1000
T_J = 150°C
1000
T_J = 150°C
100
T_J = 75°C
10
T_J = 25°C
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Forw ard V oltage , V _F (V )
Fig. 1. Typical Forward Characteristics
100
T_J = 75°C
10
T_J = 25°C
1
0
100
200
300
Re ve rs e V oltage , V _R (V )
Fig. 2. Typical Reverse Characteristics
2
1.8
f =1MHz
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0.1
1
10
100
Re ve r s e V oltage , V _R (V )
Fig. 3. Typical Capacitance
12/7/2005
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