MMBD101TS Datasheet, PDF (2/3 Pages) Pan Jit International Inc. – SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

MMBD101TS
ELECTRICAL CHARACTERISTICS (T =25OC unless otherwise noted)
J
Parameter
Reverse Breakdown Voltage
Reverse Leakage Current
Forword Voltage
Total Capacitance
Symbol
Test Condition
V_{(B R)} I_R=10µA
I_R
V_R=3.0V
V_F
I_F =10mA
C_J
f=1.0MHz , V_R=0V
ELECTRICAL CHARACTERISTICS CURVES
Min. Typ. Max. Units
7.0
10
-
V
-
-
0.25
µA
-
-
0.6
V
-
0.88
1.0
pF
100
10
10
T_J = 125^OC
T_J = 75^OC
1
T_J = 25^OC
V_R = 3V
1
0.1
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Forward Voltage, V_F (V)
FIG. 1-TYPICAL FORWARD CHARACTERISTIC
0.90
0.85
0.80
f=1MHz
0.75
0.70
0.65
0.60
0.55
0.50
0
1
2
3
4
5
6
7
Reverse Voltage, V_R (V)
FIG. 3 TYPICAL TOTAL CAPACITANCE
REV.0.1-FEB.24.2009
0.01
0
25
50
75
100
125
150
Junction Temperature, T_J (C)
FIG. 2-TYPICAL REVERSE CHARACTERISTICS
PAGE . 2