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MMBD101 Datasheet, PDF (2/3 Pages) Pan Jit International Inc. – SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
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MMBD101
ELECTRICAL CHARACTERISTICS (TJ=25OC , unless otherwise noted)
PARAMETER
Reverse Breakdown Voltage
Reverse Leakage Current
Forward Voltage
To ta l C a p a c i ta nc e
S YMB OL
TE S T C OND ITION
V (BR)
IR= 1 0 µ A
IR
V R= 3 .0 V
VF
IF= 1 0 m A
CT
f=1.0MHz ; VR=0V
MIN.
7.0
TYP.
10
MA X . UNITS
-
V
-
-
0.25
µA
-
-
0.6
V
-
0.88
1.0
pF
ELECTRICAL CHARACTERISTICS CURVE
100
10
10
1
TJ=125OC
TJ=75OC
TJ=25OC
VR=3V
1
0.1
0.1
0.1 0.2 0.3
0.4
0.5 0.6 0.7
0.8
Forward Voltage, VF(V)
Fig.1-Typical Forward Characteristics
0.01
0
25
50
75 100 125 150
Junction Temperature,TJ(C)
Fig.2-Typical Reverse Characteristics
REV.0-OCT.28.2005
0.90
0.85
0.80
0.75
0.70
f=1MHz
0.65
0.60
0.55
0.50
0
1
2
3
4
5
6
7
Reverse Voltage,VR(V)
Fig.3-Typical Total Capacitance
PAGE . 2
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