MBR1040HEWS Datasheet, PDF (2/4 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER DIODE

MBR1040HEWS
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
PARAMETER
Breakdown voltage
Instantaneous forward voltage
Reverse current
SYMBOL
TEST CONDITIONS
VBR I R=mA
I F=0.7A
I F=1A
VF
I F=0.7A
I F=1A
VR=32V
IR
VR=40V
TA=25^oC
TA=25^oC
TA=125^oC
TA=25^oC
TA=25^oC
TA=125^oC
MIN.
40
-
-
-
-
-
-
-
TYP.
-
0.49
0.52
0.4
0.44
0.8
-
0.8
MAX.
-
-
0.58
-
-
-
50
-
UNITS
V
V
V
A
A
mA
RATING AND CHARACTERISTIC CURVES
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150
T_C, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
10000
T_J = 150°C
1000
100
T_J = 125°C
10
1 T_J = 75°C
0.1
T_J = 25°C
0.01
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
1000
100
10
1
0.1
1
10
100
V_R, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
10
1
T_J = 150°C
T_J = 125°C
0.1
T_J = 75°C
0.01
0
T_J = 25°C
0.2
0.4
0.6
0.8
V_F, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
May 08,2012-REV.00
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