BAS70TW_16 Datasheet, PDF (2/6 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY DIODES ARRAYS

BAS70TW/ADW/CDW/SDW
ELECTRICAL CHARACTERISTICS (Per Diode) T =25oC Unless otherwise noted
J
Parameter
Breakdown Voltage (Note 2)
Forward Voltage (Note 2)
Reverse Leakage Current (Note 2)
Symbol
VBR
VF
IR
Test Condition
I BR=100μA
I F=1mA
I F=10mA
I F=15mA
VR=50 V
Junction Capacitance
Reverse Recovery Time
(See Figure 1)
CD
VR=0V, f=1MHZ
I F=10mA,I R=10mA
TRR
RL=100Ω
measured at I Rrec=1mA
Note : 1.Short duration (< 300μs) test pulse to minmize self heating
Min.
Typ.
Max.
Units
70
--
--
V
0.41
--
--
0.75
V
1
--
--
100
nA
--
1.25
2
pF
--
--
5
ns
820 Ω
+10 V
2 .0 k Ω
100 µH
0 .1 µ F
5 0 Ω O u tp u t
P u ls e
G e n e ra to r
I_F
?
DUT
0 .1 µ F
5 0 Ω In p u t
S a m p lin g
O s c illo s c o p e
Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (I_F) to 10mA
2. Input pulse is adjusted to I_R(peak) is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
April 25,2016-REV.04
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