UF1000_04 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – ULTRAFAST RECOVERY RECTIFIERS

DATA SHEET
UF1000~UF1008
ULTRAFAST RECOVERY RECTIFIERS
VOLTAGE 50 to 800 Volts CURRENT
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Ultra fast recovery time, high voltage.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANCAL DATA
Case: TO-220AC full molded plastic package
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
10.0 Amperes
TO-220AC
.419(10.66)
.387(9.85)
.139(3.55)
MIN
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YMB OL UF 1000 UF 1001 UF 1002 UF 1003 UF 1004 UF 1006 UF 1008 UNITS
Maximum Recurrent Peak Reverse Voltage
V RRM
50
100
200
300
400
600
800
V
Maximum RMS Voltage
V RMS
35
70
140
210
280
420
560
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
V
Maximum Average Forward Current at Tc = 100^OC
IAV
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
IF S M
Maximum Forward Voltage at 10.0A
VF
Maximum DC Reverse Current TA=25^OC
at Rated DC Blocking Voltage TA=125^OC
IR
Typ i ca l Juncti o n C a p a ci ta nce (No te 1 )
CJ
10
150
1.0
1.30
10
500
80
A
A
1.70
V
uA
50
pF
Ma xi mum Re ve rse Re co ve ry Ti me (No te 2 )
TRR
50
100
ns
Typ i ca l The rma l Re si sta nc e (No te 3 )
R θJ C
2
O_{C / W}
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e TJ,TSTG
-50 to +150
O_C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.
3. Thermal resistance from Junction to case.
4. Both Bonding and Chip structure are available.
STAD-FEB.19.2004
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