UF1000F_09 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – ULTRAFAST RECOVERY RECTIFIERS

UF1000F~UF1006F
ULTRAFAST RECOVERY RECTIFIERS
VOLTAGE 50 to 600 Volts CURRENT
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Ultra fast recovery time, high voltage.
• In compliance with EU RoHS 2002/95/EC directives
10.0 Amperes
MECHANCAL DATA
• Case: ITO-220AC full molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.055 ounces, 1.5615 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
S YMB OL UF 1 0 0 0 F UF 1 0 0 1 F UF 1 0 0 2 F UF 1 0 0 3 F UF 1 0 0 4 F UF 1 0 0 6 F UNITS
Maximum Recurrent Peak Reverse Voltage
V_RRM
50
100
200
300
400
600
V
Maximum RMS Voltage
V_RMS
35
70
140
210
280
420
V
Maximum DC Blocking Voltage
V_DC
50
100
200
300
400
600
V
Maximum Average Forward Current at Tc = 100^OC
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 10.0A
Maximum DC Reverse Current T_J=25^OC
at Rated DC Blocking Voltage T_J=125^OC
Typ i c a l J unc ti o n C a p a c i ta nc e (No te 1 )
I_{F ( A V )}
I_{F S M}
V
F
I
R
C
J
10
150
1.0
1.30
1.0
500
80
A
A
1.70
V
µA
50
pF
Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 2 )
t
rr
50
100
ns
Typ i c a l The rma l Re s i s ta nc e (No te 3 )
R _{θJ C}
2
O_{C / W}
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e T_J ,T_{S T G}
-55 to +150
O_C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.
3. Thermal resistance from Junction to case.
4. Both Bonding and Chip structure are available.
STAD-MAR.05.2009
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