UF1000F_04 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – ISOLATION ULTRAFAST RECOVERY RECTIFIERS

DATA SHEET
UF1000F~UF1008F
ISOLATION ULTRAFAST RECOVERY RECTIFIERS
VOLTAGE 50 to 800 Volts CURRENT ^{10.0 Amperes}
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Ultra fast recovery time, high voltage.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANCAL DATA
Case: ITO-220AC full molded plastic package
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
ITO-220AC
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.114(2.9)
.098(2.5)
.032(.8)
MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YMB OL UF1000F UF1001F UF1002F UF1003F UF1004F UF1006F UF1008F UNITS
Maximum Recurrent Peak Reverse Voltage
V RRM
50
100
200
300
400
600
800
V
Maximum RMS Voltage
V RMS
35
70
140
210
280
420
560
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
V
Maximum Average Forward Current at Tc = 100^OC
IAV
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
IF S M
Maximum Forward Voltage at 10.0A
VF
Maximum DC Reverse Current TA=25^OC
at Rated DC Blocking Voltage TA=125^OC
IR
Typi cal Juncti on C apaci tance (Note 1)
CJ
10
150
1.0
1.30
10
500
80
A
A
1.70
V
uA
50
pF
Maxi mum Reverse Recovery Ti me (Note 2)
TRR
50
100
ns
Typi cal Thermal Resi stance (Note 3)
RθJC
2
O_{C / W}
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e TJ,TSTG
-50 to +150
O_C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.
3. Thermal resistance from Junction to case.
4. Both Bonding and Chip structure are available.
STAD-FEB.19.2004
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