UF1000CT Datasheet, PDF (1/2 Pages) Won-Top Electronics – 10A ULTRAFAST GLASS PASSIVATED RECTIFIER

DATA SHEET
UF1000CT~UF1008CT
ULTRAFAST RECOVERY RECTIFIERS
VOLTAGE 50 to 800 Volts CURRENT
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Ultra fast recovery time, high voltage.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANCAL DATA
Case: TO-220AB full molded plastic package
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
10.0 Amperes
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
AC
Positive CT
AC
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA R A M E TE R
S YM B O L U F 1000C T U F 1001C T U F 1002C T U F 1003C T U F 1004C T U F 1006C T U F 1008C T U N ITS
M axim um R ecurrent P eak R everse V oltage
VRRM
50
100
200
300
400
600
800
V
M axim um R M S V oltage
V RM S
35
70
140
210
280
420
560
V
M axim um D C B locking V oltage
VDC
50
100
200
300
400
600
800
V
M axim um A verage F orw ard C urrent at Tc = 100^O C
IA V
P eak F orw ard S urge C urrent :8.3m s single half sine-
IF S M
w ave superim posed on rated load(JE D E C m ethod)
M axim um F orw ard V oltage at 5.0A
VF
M axim um D C R everse C urrent TA =25^O C
at R ated D C B locking V oltage TA =125^O C
IR
Typical Junction C apacitance (N ote 1)
CJ
10
125
1.0
1.30
10
500
80
A
A
1.70
V
uA
50
pF
M axim um R everse R ecovery Tim e (N ote 2)
TRR
50
100
ns
Typical Therm al R esistance (N ote 3)
R θJC
2
O_{C /W}
O perating Junction and S torage Tem perature R ange TJ,TS TG
-50 to +150
O_C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
3. Thermal resistance from Junction to case.
4. Both Bonding and Chip structure are available.
STAD-MAR.12.2004
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