SIC10A065D Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – SILICON CARBIDE SCHOTTKY DIODE

SiC10A065D
SILICON CARBIDE SCHOTTKY DIODE
Voltage 650 V
Current
10 A
Features
 Temperature Independent Switching Behavior
 Low Conduction and Switching Loss
 High Surge Current Capability
 Positive Temperature Coefficient on V_F
 Fast Reverse Recovery
Mechanical Data
 Case: Molded plastic, TO-263
 Marking: 10A065D
Benefits
 High Frequency Operation
 Higher System Efficiency
 Environmental Protection
 Parallel Device Convenience
 Hard Switching & High Reliability
 High Temperature Application
TO-263
Unit: inch(mm)
Maximum Ratings
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
(T_P=10mS, Half Sine Wave, D=0.1)
SYMBOL
VRRM
VRSM
VR
IF(AV)
I_FRM
TEST CONDITIONS
TJ=25^oC
TJ=25^oC
TJ=25^oC
TC=25^oC
TC=125^oC
TC=150^oC
TC=25^oC
TC=125^oC
VALUE
650
650
650
25
14
10
59
50
UNITS
V
V
V
A
A
A
A
A
February 11,2015-REV.00
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