SIC04A065S Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – SILICON CARBIDE SCHOTTKY DIODE

SiC04A065S
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
 Temperature Independent Switching Behavior
 Low Conduction and Switching Loss
 High Surge Current Capability
 Positive Temperature Coefficient on V_F
 Fast Reverse Recovery
Mechanical Data
 Case: Molded plastic, TO-252AA
 Marking: 04A065S
Benefits
 High Frequency Operation
 Higher System Efficiency
 Environmental Protection
 Parallel Device Convenience
 Hard Switching & High Reliability
 High Temperature Application
TO-252AA
Unit: inch(mm)
Maximum Ratings
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
(T_P=10mS, Half Sine Wave, D=0.1)
SYMBOL
VRRM
VRSM
VR
IF(AV)
I_FRM
TEST CONDITIONS
TJ=25^oC
TJ=25^oC
TJ=25^oC
TC=25^oC
TC=125^oC
TC=150^oC
TC=25^oC
TC=125^oC
VALUE
650
650
650
11
6
4
26
23
UNITS
V
V
V
A
A
A
A
A
April 21,2015-REV.01
Page 1