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SIC04A065ND Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – SILICON CARBIDE SCHOTTKY DIODE | |||
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SiC04A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
ï¬ Temperature Independent Switching Behavior
ï¬ Low Conduction and Switching Loss
ï¬ High Surge Current Capability
ï¬ Positive Temperature Coefficient on VF
ï¬ Fast Reverse Recovery
Mechanical Data
ï¬ Case: Molded plastic, TO-263
ï¬ Marking: 04A065ND
Benefits
ï¬ High Frequency Operation
ï¬ Higher System Efficiency
ï¬ Environmental Protection
ï¬ Parallel Device Convenience
ï¬ Hard Switching & High Reliability
ï¬ High Temperature Application
TO-263
Unit: inch(mm)
Maximum Ratings
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave, D=0.1)
SYMBOL
VRRM
VRSM
VR
IF(AV)
IFRM
TEST CONDITIONS
TJ=25oC
TJ=25oC
TJ=25oC
TC=25oC
TC=125oC
TC=150oC
TC=25oC
TC=125oC
VALUE
650
650
650
11
6
4
26
23
UNITS
V
V
V
A
A
A
A
A
June 13,2016-REV.00
Page 1
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