SIC02A120S Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – SILICON CARBIDE SCHOTTKY DIODE

SiC02A120S
SILICON CARBIDE SCHOTTKY DIODE
Voltage 1200 V Current
2A
Features
 Temperature Independent Switching Behavior
 Low Conduction and Switching Loss
 High Surge Current Capability
 Positive Temperature Coefficient on V_F
 Fast Reverse Recovery
Mechanical Data
 Case: Molded plastic, TO-252AA
 Marking: 02A120S
Benefits
 High Frequency Operation
 Higher System Efficiency
 Environmental Protection
 Parallel Device Convenience
 Hard Switching & High Reliability
 High Temperature Application
TO-252AA
Unit: inch(mm)
Maximum Ratings
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
(T_P=10mS, Half Sine Wave, D=0.1)
SYMBOL
V_RRM
V_RSM
V_R
I_F(AV)
I_FRM
TEST CONDITIONS
TJ=25^oC
TJ=25^oC
TJ=25^oC
TC=25^oC
TC=125^oC
TC=165^oC
TC=25^oC
TC=125^oC
VALUE
1200
1200
1200
9
5
2
19
16
UNITS
V
V
V
A
A
A
A
A
June 15,2016-REV.02
Page 1