SD620CT_09 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

SD620CT~SD660CT
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 60 Volts
CURRENT ^{6.0 Amperes}
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification
94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Low power loss, High efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
• High temperature soldering guaranteed:260^OC/10 seconds at terminals
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-251AB molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
• Polarity: As marking
• Standard packaging: 16mm tape (EIA-481)
• Weight: 0.0104 ounces, 0.297 grams.
TO-251AB
.264(6.7)
.248(6.3)
.216(5.5)
.200(5.1)
.032(0.8)
.012(0.3)
.09 .09
(2.3) (2.3)
Unit : inch (mm)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
.071(1.8)
.051(1.3)
.02(0.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
S YMB OL S D 6 2 0 C T S D 6 3 0 C T S D 6 4 0 C T S D 6 5 0 C T S D 6 6 0 C T UNITS
Maximum Recurrent Peak Reverse Voltage
V_RRM
20
30
40
50
60
V
Maximum RMS Voltage
V_RSM
14
21
28
35
42
V
Maximum DC Blocking Voltage
V_DC
20
30
40
50
60
V
Maximum Average Forward Current at Tc =75^OC
Peak Forward Surge Current :8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 3.0A per leg
Maximum DC Reverse Current T_J=25^O C
at Rated DC Blocking Voltage T_J=100^OC
Typ i c a l The rma l Re s i s ta nc e
I_{F ( A V )}
I_{F S M}
V_F
I_R
R_{θJ C}
6.0
75
0.55
0.2
20
5
A
A
0.7
V
0.1
20
mA
O_{C / W}
Op e ra ti ng J unc ti o n Te m p e ra ture Ra ng e
TJ
-55 to +125
-55 to +150
O_C
S to ra g e Te m p e ra ture Ra ng e
TSTG
-55 to +150
O_C
Note: Both Bonding and Chip structure are available.
STAD-APR.27.2009
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