SD620CT_04 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

DATA SHEET
SD620CT~SD6100CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 100 Volts CURRENT ^{6.0 Amperes TO-251AB}
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Low power loss, High efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
• High temperature soldering guaranteed:260^OC/10 seconds at terminals
• Pb free product are available : 99% Sn above can meet Rohs environment substance
directive request
.264(6.7)
.248(6.3)
.216(5.5)
.200(5.1)
MECHANICAL DATA
Case: D PAK/TO-251AB molded plastic
Terminals: Solder plated, solderable per MIL-STD-202G,Method 208
Polarity: As marking
Weight: 0.015 ounces, 0.4grams.
.032(0.8)
.012(0.3)
.09 .09
(2.3) (2.3)
Unit : inch (mm)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
.071(1.8)
.051(1.3)
.02(0.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAM ETER
S Y M B O L S D 620C T S D 630C T S D 640C T S D 650C T S D 660C T S D 680C T S D 6100C T U N IT S
M axim um R ecurrent P eak R everse V oltage
VRRM
20
30
40
50
60
80
100
V
M axim um R M S V oltage
V RM S
14
21
28
35
42
56
70
V
M axim um D C B locking V oltage
VDC
20
30
40
M axim um A verage F orw ard C urrent .375"(9.5m m )
lead length at Tc =75^O C
IA V
P eak F orw ard S urge C urrent :8.3m s single half sine-w ave
superim posed on rated load(JE D E C m ethod)
IF S M
M axim um F orw ard V oltage at 3.0A per leg
VF
0.55
M axim um D C R everse C urrent TJ=25^O C
at R ated D C B locking V oltage TJ=100^O C
IR
Typical Therm al R esistance
R θJC
50
60
6.0
75
0.70
0.2
20
5
80
100
V
A
A
0.85
V
mA
O_{C /W}
O perating Junction Tem perature R ang
TJ
-50 to +125
O_C
S torage Tem perature R ang
TJ,TS TG
-50 to +150
O_C
Note: Both Bonding and Chip structure are available.
STAD-DEC.16.2004
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